Theory of electrons, holes and excitons in GaAs polytype quantum dots
arXiv:1512.03646 · doi:10.1063/1.4945112
Abstract
Single and multi-band (Burt-Foreman) k.p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorious Nano Lett. 15, 2652 (2015)] it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al. Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes.
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Cited by in corpus (6)
- Realistic multiband k.p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase
- Electronic Origin of Linearly Polarized Emission in CdSe/CdS Dot-in-Rod Heterostructures
- VASP2KP: kp models and Lande g-factors from ab initio calculations
- Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character
- Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells
- DFT2kp: effective kp models from ab-initio data