Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism

Abstract

We describe in greater detail the exactly solvable microscopic model we have developed for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system (Phys. Rev. Lett., to appear). The model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good agreement with experimental observations, reveal an unexpectedly complex interplay between compressive and tensile strain within the mixed Ga-Si surface layer.

4 pages, 4 figures, to appear in Phys. Rev. Lett; this version includes a 4-page appendix giving the full solution of the Frenkel-Kontorova model

References in corpus (1)

• Density-functional theory calculations for poly-atomic systems: Electronic structure, static and elastic properties and ab initio molecular dynamics

Cited by in corpus (8)

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• Lattice gas models of coherent strained epitaxy
• Electronic properties of the 1D Frenkel-Kontorova model
• Mode-locking of incommensurate phase by quantum zero point energy in the Frenkel-Kontorova model
• Size calibration of strained epitaxial islands due to dipole-monopole interaction