Formation of atom wires on vicinal silicon

Abstract

The formation of atomic wires via pseudomorphic step-edge decoration on vicinal silicon surfaces has been analyzed for Ga on the Si(112) surface using Scanning Tunneling Microscopy and Density Functional Theory calculations. Based on a chemical potential analysis involving more than thirty candidate structures and considering various fabrication procedures, it is concluded that pseudomorphic growth on stepped Si(112), both under equilibrium and non-equilibrium conditions, must favor formation of Ga zig-zag chains rather than linear atom chains. The surface is non-metallic and presents quasi-one dimensional character in the lowest conduction band.

submitted

References in corpus (2)

• Self-Doping of Gold Chains on Silicon: A New Structural Model for Si(111)5x2-Au
• Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism

Cited by in corpus (6)

• Evidence for chiral superconductivity on a silicon surface
• Evolutionary approach for finding the atomic structure of steps on stable crystal surfaces
• Ga-induced atom wire formation and passivation of stepped Si(112)
• Coupled Sublattice Melting and Charge-Order Transition in Two Dimensions
• Atomic and electronic structure of doped Si(111)(2root3x2root3)R30(degrees)-Sn interfaces
• Transfer matrix solution of the Wako-Saitô-Muñoz-Eaton model augmented by arbitrary short range interactions