activity
19982025
most citedItinerant Antiferromagnetism in RuO

277 citations · 1.3k across the 18 of their papers we have counts for

collaborators

18 papers

cond-mat.supr-con2025

Enhanced superconductivity in ultrathin FeSe films on SrTiO3 via resonant anti-shielding: Superconductivity meets superfluidity

Krzysztof Kempa, Michael J. Naughton, Hanno H. Weitering

A vanishingly small dielectric function reflects a singular polarization response in a medium, leading to collective plasmonic or polaronic excitations that can enhance Cooper pair…

cond-mat.supr-con2025

Microscopic Fingerprint of Chiral Superconductivity

Xuefeng Wu, Xuan Hao, Zhuo Chen +8

Chiral superconductors have long been theorized to break time-reversal symmetry and support exotic topological features such as Majorana modes and spontaneous edge currents, promis…

cond-mat.mes-hall2022★ 18 cited

Anti-site defect-induced disorder in compensated topological magnet MnBiSbTe

Felix Lüpke, Marek Kolmer, Jiaqiang Yan +5

The gapped Dirac-like surface states of compensated magnetic topological insulator MnBiSbTe (MBST) are a promising host for exotic quantum phenomena such as the qua…

cond-mat.supr-con2019★ 47 cited

Superconductivity in a hole-doped Mott-insulating triangular adatom layer on a silicon surface

Xuefeng Wu, Fangfei Ming, Tyler S. Smith +5

Adsorption of one-third monolayer of Sn on an atomically-clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilu…

cond-mat.mes-hall2019★ 9 cited

Coupled Sublattice Melting and Charge-Order Transition in Two Dimensions

Tyler S. Smith, Fangfei Ming, Daniel González Trabada +5

Two-dimensional melting is one of the most fascinating and poorly understood phase transitions in nature. Theoretical investigations often point to a two-step melting scenario invo…

cond-mat.mes-hall2017★ 15 cited

Zero-bias anomaly in nano-scale hole-doped Mott insulators on a triangular silicon surface

Fangfei Ming, Tyler S. Smith, Steven Johnston +2

Adsorption of 1/3 monolayer of Sn on a heavily-doped p-type Si(111) substrate results in the formation of a hole-doped Mott insulator, with electronic properties that are remarkabl…