Ballistic Spin Injection from Fe(001) into ZnSe and GaAs

Abstract

We consider the spin injection from Fe into ZnSe and GaAs in the ballistic limit. By means of the ab initio SKKR method we calculate the ground state properties of epitaxial Fe|ZnSe(001) and Fe|GaAs(001) heterostructures. Three injection processes are considered: injection of hot electrons and injection of "thermal" electrons with and without an interface barrier. The calculation of the conductance by the Landauer formula shows, that these interfaces act like a nearly ideal spin filter, with spin polarization as high as 99%. This can be traced back to the symmetry of the band structure of Fe for normal incidence.

4 pages, 3 figures

References in corpus (2)

• Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
• Ideal Spin Filters: Theoretical Study of Electron Transmission Through Ordered and Disordered Interfaces Between Ferromagnetic Metals and Semiconductors

Cited by in corpus (31)

• Spintronics: Fundamentals and applications
• Semiconductor Spintronics
• Spin diffusion and injection in semiconductor structures: Electric field effects
• Determination of Interface Atomic Structure and Its Impact on Spin Transport Using Z-Contrast Microscopy and Density-Functional Theory
• Spin extraction theory and its relevance to spintronics
• Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations
• Interface properties of the NiMnSb/InP and NiMnSb/GaAs contacts
• Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device
• Spin-injection through an Fe/InAs Interface
• Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions
• Towards half-metallic interfaces: the Co${}_2$CrAl/InP contacts
• Coherent spin valve phenomena and electrical spin injection in ferromagnetic/semiconductor/ferromagnetic junctions
• Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions
• A KKR Green function formalism for ballistic transport
• Structural and magnetic properties of the (001) and (111) surfaces of the half-metal NiMnSb
• Influence of interface structure on electronic properties and Schottky barriers in Fe/GaAs magnetic junctions
• All-Electrical Quantum Computation with Mobile Spin Qubits
• Spin polarization control through resonant states in an Fe/GaAs Schottky barrier
• Spin transport theory in ferromagnet/semiconductor systems with non-collinear magnetization configurations
• Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier
• Spin accumulation in degenerate semiconductors near modified Schottky contact with ferromagnets
• Dynamic ferromagnetic proximity effect in photoexcited semiconductors
• Spin-injection spectra of CoFe/GaAs contacts: dependence on Fe concentration, interface and annealing conditions
• Charge and spin density modulations in semiconductor quantum wires
• Spin injection from Fe into Si(001): ab initio calculations and role of the Si complex band structure
• Ballistic Spin Injection from Fe into ZnSe and GaAs with a (001), (111), and (110) orientation
• Spin accumulation and decay in magnetic Schottky barriers
• Ab initio study of the interface properties of Fe/GaAs(110)
• Highly polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current
• Ab-initio calculations of spin tunneling through an indirect barrier
• Landauer conductance of tunnel junctions: Strong impact from boundary conditions