Dynamic ferromagnetic proximity effect in photoexcited semiconductors
arXiv:cond-mat/0310031 · doi:10.1103/PhysRevLett.92.126601
Abstract
The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet is treated theoretically and compared with time-dependent Faraday rotation experiments. The long time response of the system is found to be governed by the first tens of picoseconds in which the excited plasma interacts strongly with the intrinsic interface between semiconductor and ferromagnet in spite of the existence of a Schottky barrier in equilibrium.