Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Abstract

The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their intrinsically clean surface without dangling bonds, the vdW magnets hold the potential to construct a superior interface that allows for efficient electrical manipulation of magnetism. Despite several attempts in this direction, it usually requires a cryogenic condition and the assistance of external magnetic fields, which is detrimental to the real application. Here, we fabricate heterostructures based on Fe3GaTe2 flakes that possess room-temperature ferromagnetism with excellent perpendicular magnetic anisotropy. The current-driven non-reciprocal modulation of coercive fields reveals a high spin-torque efficiency in the Fe3GaTe2/Pt heterostructures, which further leads to a full magnetization switching by current. Moreover, we demonstrate the field-free magnetization switching resulting from out-of-plane polarized spin currents by asymmetric geometry design. Our work could expedite the development of efficient vdW spintronic logic, memory and neuromorphic computing devices.

References in corpus (26)

• Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
• Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
• Spin torque switching with the giant spin Hall effect of tantalum
• Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe${}_3$GeTe${}_2$
• Magnetic switching by spin torque from the spin Hall effect
• Current-driven dynamics of chiral ferromagnetic domain walls
• Two-Dimensional Itinerant Ising Ferromagnetism in Atomically thin Fe3GeTe2
• Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields
• Universal mechanical exfoliation of large-area 2D crystals
• Van der Waals heterostructures for spintronics and opto-spintronics
• Hard magnetic properties in nanoflake van der Waals Fe3GeTe2
• Determination of the Spin-Hall-Effect-Induced and the Wedged-Structure-Induced Spin Torque Efficiencies in Heterostructures with Perpendicular Magnetic Anisotropy
• Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque without an External Magnetic Field by Engineering a Tilted Anisotropy
• Time- and spatially-resolved magnetization dynamics driven by spin-orbit torques
• Highly efficient spin-orbit torque and switching of layered ferromagnet Fe3GeTe2
• Deterministic magnetization switching using lateral spin-orbit torque
• Current Control of Magnetism in Two-Dimensional Fe3GeTe2
• Gigantic current control of coercive field and magnetic memory based on nm-thin ferromagnetic van der Waals Fe3GeTe2
• Interfacial Dzyaloshinskii-Moriya interaction and chiral magnetic textures in a ferrimagnetic insulator
• Current-induced deterministic switching of van der Waals ferromagnet at room temperature
• Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe${}_3$GaTe${}_2$ with highly spin-polarized Fermi surfaces
• Orbit-transfer torque driven field-free switching of perpendicular magnetization
• Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2
• Interface-enhanced ferromagnetism with long-distance effect in van der Waals semiconductor
• Wafer-scale epitaxial growth of the thickness-controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications
• Strong bulk spin-orbit torques quantified in the van der Waals ferromagnet Fe3GeTe2

Cited by in corpus (7)

• All van der Waals three-terminal SOT-MRAM realized by topological ferromagnet Fe3GeTe2
• Novel magnetic-field-free switching behavior in vdW-magnet/oxide heterostructure
• Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion
• Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4
• Microscopic mechanisms of Strong Electron Scattering and Giant Anomalous Hall Effect in high-Curie-temperature Fe3GaTe2 van der Waals Films
• Edge non-collinear magnetism in nanoribbons of Fe3GeTe2 and Fe3GaTe2
• Near room-temperature ferromagnetism from double-exchange in the van der Waals material CrGeTe${}_3$: evidence from optical conductivity under pressure