Narrow optical transitions in erbium-implanted silicon waveguides

Abstract

The realization of a scalable architecture for quantum information processing is a major challenge for quantum science. A promising approach is based on emitters in nanostructures that are coupled by light. Here, we show that erbium dopants can be reproducibly integrated at well-defined lattice sites by implantation into pure silicon. We thus achieve a narrow inhomogeneous broadening, less than 1 GHz, strong optical transitions, and an outstanding optical coherence even at temperatures of 8 K, with an upper bound to the homogeneous linewidth of around 10 kHz. Our study thus introduces a promising materials platform for the implementation of on-chip quantum memories, microwave-to-optical conversion, and distributed quantum information processing.

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• Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection
• Erbium emitters in commercially fabricated nanophotonic silicon waveguides
• The Zeeman and hyperfine interactions of a single ${}^{167}E{r}^{3+}$ ion in Si
• Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride
• Nuclear Spin Engineering for Quantum Information Science
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• Incoherent Measurement of Sub-10 kHz Optical Linewidths
• A silicon spin vacuum: isotopically enriched ${}^{28}$silicon-on-insulator and ${}^{28}$silicon from ultra-high fluence ion implantation
• Spin-photon Qubits for Scalable Quantum Network