Formation of quantum dots in GaN/AlGaN FETs

Abstract

GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels.

arXiv comment10 pages, 4 figures

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Cited by in corpus (5)

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• Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry
• Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs
• Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
• Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics