activity
20202024
most citedFormation of quantum dots in GaN/AlGaN FETs

8 citations · 25 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2024★ 2 cited

Charge state estimation in quantum dots using a Bayesian approach

Motoya Shinozaki, Yui Muto, Takahito Kitada +1

Detection of single-electron charges in solid-state nanodevices is a key technique in semiconductor quantum bit readout for quantum information processing and probing electronic pr…

cond-mat.mes-hall2023★ 3 cited

Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs

Kazuma Matsumura, Takaya Abe, Takahito Kitada +5

Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length de…

cond-mat.mes-hall2022★ 6 cited

Visual explanations of machine learning model estimating charge states in quantum dots

Yui Muto, Takumi Nakaso, Motoya Shinozaki +13

Charge state recognition in quantum dot devices is important in the preparation of quantum bits for quantum information processing. Toward auto-tuning of larger-scale quantum devic…

cond-mat.mes-hall2021★ 6 cited

Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

Motoya Shinozaki, Yui Muto, Takahito Kitada +10

We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the…

cond-mat.mes-hall2020★ 8 cited

Formation of quantum dots in GaN/AlGaN FETs

Tomohiro Otsuka, Takaya Abe, Takahito Kitada +3

GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transis…