activity
20202026
most citedLattice-guided growth of dense arrays of aligned transition metal dichalcogenide nanoribbons with high catalytic reactivity

22 citations · 55 across the 13 of their papers we have counts for

collaborators

14 papers

cond-mat.mes-hall2026

Automated Spin Readout Signal Analysis Using U-Net with Variable-Length Traces and Experimental Noise

Yui Muto, Motoya Shinozaki, Hideaki Yuta +5

Single-shot spin-state discrimination is essential for semiconductor spin qubits, but conventional threshold-based analysis of spin readout traces becomes unreliable under noisy co…

cond-mat.mes-hall2025

Perfect impedance matching unlocks sensitive radio-frequency reflectometry in 2D material quantum dots

Motoya Shinozaki, Akitomi Shirachi, Yuta Kera +7

Two-dimensional (2D) materials are attractive platforms for realizing high-performance quantum bits (qubits). However, radio-frequency (RF) charge detection, which is a key techniq…

cond-mat.mes-hall2025

Quantum dot transistors based on CVD-grown graphene nano islands

Takumi Seo, Motoya Shinozaki, Akiko Tada +8

Graphene nanoislands (GNIs) are one of the promising building blocks for quantum devices owing to their unique potential. However, direct electrical measurements of GNIs have been…

cond-mat.mes-hall2025

On-chip calibrated radio-frequency measurement at cryogenic temperatures for determination of SrTiO3-based capacitor properties

Akitomi Shirachi, Motoya Shinozaki, Yasuhide Tomioka +7

Quantum computing has emerged as a promising technology for next-generation information processing, utilizing semiconductor quantum dots as one of the candidates for quantum bits.…

cond-mat.mes-hall2025★ 4 cited

Formation of multiple quantum dots in ZnO heterostructures

Koichi Baba, Kosuke Noro, Yusuke Kozuka +4

In recent years, advancements in semiconductor manufacturing technology have enabled the formation of high-quality, high-mobility two-dimensional electron gases in zinc oxide (ZnO)…

cond-mat.mes-hall2025★ 3 cited

RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices

Motoya Shinozaki, Tomoya Johmen, Aruto Hosaka +8

Quantum computers require both scalability and high performance for practical applications. While semiconductor quantum dots are promising candidates for quantum bits, the complexi…

cond-mat.mes-hall2025★ 2 cited

Automatic detection of single-electron regime of quantum dots and definition of virtual gates using U-Net and clustering

Yui Muto, Michael R. Zielewski, Motoya Shinozaki +2

To realize practical quantum computers, a large number of quantum bits (qubits) will be required. Semiconductor spin qubits offer advantages such as high scalability and compatibil…

cond-mat.mes-hall2025

Charge sensing of few-electron ZnO double quantum dots probed by radio-frequency reflectometry

Kosuke Noro, Motoya Shinozaki, Yusuke Kozuka +6

Zinc oxide (ZnO) has garnered much attention as a promising material for quantum devices due to its unique characteristics. To utilize the potential of ZnO for quantum devices, the…

cond-mat.mes-hall2024

Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics

Takaya Abe, Motoya Shinozaki, Kazuma Matsumura +6

GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, the current collapse poses a challenge to the application of GaN FE…

cond-mat.mes-hall2024★ 2 cited

Charge state estimation in quantum dots using a Bayesian approach

Motoya Shinozaki, Yui Muto, Takahito Kitada +1

Detection of single-electron charges in solid-state nanodevices is a key technique in semiconductor quantum bit readout for quantum information processing and probing electronic pr…

cond-mat.mes-hall2024★ 22 cited

Lattice-guided growth of dense arrays of aligned transition metal dichalcogenide nanoribbons with high catalytic reactivity

Zongpeng Ma, Pablo Solís-Fernández, Kaito Hirata +15

Transition metal dichalcogenides (TMDs) exhibit unique properties and potential applications when reduced to one-dimensional (1D) nanoribbons (NRs), owing to quantum confinement an…

cond-mat.mes-hall2024★ 1 cited

Microwave dependent quantum transport characteristics in GaN/AlGaN FETs

Motoya Shinozaki, Takaya Abe, Kazuma Matsumura +3

Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum…

cond-mat.mes-hall2023★ 13 cited

Kondo effect in electrostatically defined ZnO quantum dots

Kosuke Noro, Yusuke Kozuka, Kazuma Matsumura +5

Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si…

cond-mat.mes-hall2020★ 8 cited

Formation of quantum dots in GaN/AlGaN FETs

Tomohiro Otsuka, Takaya Abe, Takahito Kitada +3

GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transis…