8 citations · 11 across the 3 of their papers we have counts for
3 papers
Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics
Takaya Abe, Motoya Shinozaki, Kazuma Matsumura +6
GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, the current collapse poses a challenge to the application of GaN FE…
Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs
Kazuma Matsumura, Takaya Abe, Takahito Kitada +5
Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length de…
Formation of quantum dots in GaN/AlGaN FETs
Tomohiro Otsuka, Takaya Abe, Takahito Kitada +3
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transis…