Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC
arXiv:2001.06842 · doi:10.1103/PhysRevB.101.134110
Abstract
Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces between stationary and flying qubits. Here we present a detailed overview of the relevant properties of the spins in silicon vacancies of the 6H-SiC polytype. This includes the temperature-dependent photoluminescence, optically detected magnetic resonance, and the relaxation times of the longitudinal and transverse components of the spins, during free precession as well as under the influence of different refocusing schemes.
arXiv comment9 pages, 13 figures
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- Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC
- Characterization of single shallow silicon-vacancy centers in 4H-SiC
- Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature
- Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide