Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

Abstract

We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays.

6+6 pages, 4+3 figures

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• Neural-network-designed three-qubit gates robust against charge noise and crosstalk in silicon
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• Noise cross-correlations from single-shot measurements
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• Characterize noise correlation and enhance coherence via qubit motion