Narrow photoluminescence peak of epitaxial MoS${}_2$ on graphene/Ir(111)

Abstract

We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS${}_2$ on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS${}_2$ interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS${}_2$ with the graphene is highlighted by angle-resolved photoemission spectroscopy and temperature dependent Raman spectroscopy. These methods reveal that there is no hybridization between electronic states of graphene and MoS${}_2$ and a different thermal expansion of graphene and MoS${}_2$. Molecular beam epitaxy grown MoS2 on graphene is therefore an important platform for optoelectronics which allows for large area growth with controlled properties.

arXiv comment18 pages, 5 figures, submitted for review

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Cited by in corpus (10)

• Origin of the flat band in heavily Cs doped graphene
• Band Bending and Valence Band Quantization at Line Defects in MoS${}_2$
• Effects of CVD Growth Parameters on Global and Local Optical Properties of MoS${}_2$ Monolayers
• Modulated Kondo screening along magnetic mirror twin boundaries in monolayer MoS2 on graphene
• Comprehensive tunneling spectroscopy of quasi-freestanding MoS${}_2$ on graphene on Ir(111)
• Metal-insulator transition in monolayer MoS${}_2$ via contactless chemical doping
• Tip-induced creation and Jahn-Teller distortions of sulfur vacancies in single-layer MoS${}_2$
• Dirac-Electron Behavior for Spin-Up Electrons in Strongly Interacting Graphene on Ferromagnetic Mn${}_5$Ge${}_3$
• Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
• Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres