G. Di Santo

collaborators

4 papers

cond-mat.mtrl-sci2019

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$ -Sn

Ivan Madarevic, Umamahesh Thupakula, Gertjan Lippertz +10

In-plane compressively strained $α$ -Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimeta…

cond-mat.mes-hall2019

Electronic Structure Shift of Deep Nanoscale Silicon by SiO $_{2}$ - vs. Si $_{3}$ N $_{4}$ -Embedding as Alternative to Impurity Doping

Dirk König, Noël Wilck, Daniel Hiller +7

Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on…

cond-mat.mes-hall2019

Origin of the flat band in heavily Cs doped graphene

N. Ehlen, M. Hell, G. Marini +6

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method t…

cond-mat.mes-hall2018

Narrow photoluminescence peak of epitaxial MoS $_{2}$ on graphene/Ir(111)

Niels Ehlen, Joshua Hall, Boris V. Senkovskiy +10

We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS $_{2}$ on graphene/Ir(111). This observation is explained…

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal α-Sn

Electronic Structure Shift of Deep Nanoscale Silicon by SiO2​- vs. Si3​N4​-Embedding as Alternative to Impurity Doping

Origin of the flat band in heavily Cs doped graphene

Narrow photoluminescence peak of epitaxial MoS2​ on graphene/Ir(111)

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$ -Sn

Electronic Structure Shift of Deep Nanoscale Silicon by SiO $_{2}$ - vs. Si $_{3}$ N $_{4}$ -Embedding as Alternative to Impurity Doping

Narrow photoluminescence peak of epitaxial MoS $_{2}$ on graphene/Ir(111)