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15 papers
Spectral Fingerprints of Resonant Defect Scattering by Substitutional Mn in Graphene
Ahmed Samir Lotfy, Zviadi Zarkua, Renan Villarreal +10
Using substitutional Mn in graphene/Cu(111) as a model point defect, we combine scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) to test th…
Mastering the growth of antimonene on Bi2Se3: strategies and insights
Roberto Flammini, Conor Hogan, Stefano Colonna +13
Antimonene, the two-dimensional phase of antimony, appears in two distinct allotropes when epitaxially grown on Bi2Se3: the puckered asymmetric washboard (α) and buckled honeycomb…
Molecular order induced charge transfer in a C-topological insulator moiré heterostructure
Ram Prakash Pandeya, Konstantin P. Shchukin, Yannic Falke +9
We synthesize and spectroscopically investigate monolayer C on the topological insulator (TI) BiTe. This C/BiTe heterostructure is characterized by ex…
Unravelling the Band Structure and Orbital Character of a -Conjugated 2D Graphdiyne-Based Organometallic Network
Paolo D'Agosta, Simona Achilli, Francesco Tumino +7
Graphdiyne-based carbon systems generate intriguing layered sp-sp organometallic lattices, characterized by flexible acetylenic groups connecting planar carbon units through me…
Observation of Dirac-like surface state bands on the top surface of BiSe
H. Lohani, K. Majhi, R. Ganesan +5
Two quintuple layers of strong topological insulator Bi2Se3 are coupled by a Bi bilayer in BiSe crystal. We investigated its electronic structure using angle resolved photoelectron…
Magnetic Dirac semimetal state of (Mn,Ge)BiTe
Alexander S. Frolov, Dmitry Yu. Usachov, Artem V. Tarasov +13
For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural…
Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Dirk König, Michael Frentzen, Daniel Hiller +9
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscal…
Electronic band structure in pristine and Sulfur-doped TaNiSe
Tanusree Saha, Luca Petaccia, Barbara Ressel +4
We present an angle-resolved photoemission study of the electronic band structure of the excitonic insulator TaNiSe, as well as its evolution upon Sulfur doping. Our experi…
Can the "shadow" of graphene band clarify its flatness?
Matteo Jugovac, Cesare Tresca, Iulia Cojocariu +6
Graphene band renormalization at the proximity of the van Hove singularity (VHS) has been investigated by angle-resolved photoemission spectroscopy (ARPES) on the Li-doped quasi-fr…
Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal -Sn
Ivan Madarevic, Umamahesh Thupakula, Gertjan Lippertz +10
In-plane compressively strained -Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimeta…
Electronic Structure Shift of Deep Nanoscale Silicon by SiO- vs. SiN-Embedding as Alternative to Impurity Doping
Dirk König, Noël Wilck, Daniel Hiller +7
Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on…
Origin of the flat band in heavily Cs doped graphene
N. Ehlen, M. Hell, G. Marini +6
A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method t…
Narrow photoluminescence peak of epitaxial MoS on graphene/Ir(111)
Niels Ehlen, Joshua Hall, Boris V. Senkovskiy +10
We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS on graphene/Ir(111). This observation is explained…
Prediction and observation of the first antiferromagnetic topological insulator
Mikhail M. Otrokov, Ilya I. Klimovskikh, Hendrik Bentmann +41
Magnetic topological insulators (MTIs) are narrow gap semiconductor materials that combine non-trivial band topology and magnetic order. Unlike their nonmagnetic counterparts, MTIs…
Synchrotron radiation induced magnetization in magnetically-doped and pristine topological insulators
A. M. Shikin, D. M. Sostina, A. A. Rybkina +14
Quantum mechanics postulates that any measurement influences the state of the investigated system. Here, by means of angle-, spin-, and time-resolved photoemission experiments and…