Electronic band structure in pristine and Sulfur-doped Ta$_2$NiSe$_5$

Tanusree Saha; Luca Petaccia; Barbara Ressel; Primož Rebernik Ribič; Giovanni Di Santo; Wenjuan Zhao; Giovanni De Ninno

doi:10.1103/PhysRevB.106.075148

paper

Electronic band structure in pristine and Sulfur-doped Ta $_{2}$ NiSe $_{5}$

arXiv:2205.15883 · doi:10.1103/PhysRevB.106.075148

Abstract

We present an angle-resolved photoemission study of the electronic band structure of the excitonic insulator Ta $_{2}$ NiSe $_{5}$ , as well as its evolution upon Sulfur doping. Our experimental data show that while the excitonic insulating phase is still preserved at a Sulfur-doping level of 25 $%$ , such phase is heavily suppressed when there is a substantial amount, $\sim$ 50 $%$ , of S-doping at liquid nitrogen temperatures. Moreover, our photon energy-dependent measurements reveal a clear three dimensionality of the electronic structure, both in Ta $_{2}$ NiSe $_{5}$ and Ta $_{2}$ Ni(Se $_{1 - x}$ S $_{x}$ ) $_{5}$ ( $x = 0.25, 0.50$ ) compounds. This suggests a reduction of electrical and thermal conductivities, which might make these compounds less suitable for electronic transport applications.

References in corpus (18)

Cited by in corpus (1)

Anomalous excitonic phase diagram in band-gap-tuned Ta2Ni(Se,S)5

Electronic band structure in pristine and Sulfur-doped Ta2​NiSe5​

Abstract

References in corpus (18)

Cited by in corpus (1)

Electronic band structure in pristine and Sulfur-doped Ta $_{2}$ NiSe $_{5}$