24 citations · 24 across the 1 of their papers we have counts for
5 papers
Comprehensive tunneling spectroscopy of quasi-freestanding MoS on graphene on Ir(111)
Clifford Murray, Wouter Jolie, Jeison A. Fischer +6
We apply scanning tunneling spectroscopy to determine the bandgaps of mono-, bi- and trilayer MoS grown on a graphene single crystal on Ir(111). Besides the typical scanning tu…
Origin of the flat band in heavily Cs doped graphene
N. Ehlen, M. Hell, G. Marini +6
A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method t…
Narrow photoluminescence peak of epitaxial MoS on graphene/Ir(111)
Niels Ehlen, Joshua Hall, Boris V. Senkovskiy +10
We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS on graphene/Ir(111). This observation is explained…
Emergent Dirac carriers across a pressure-induced Lifshitz transition in black phosphorus
P. Di Pietro, M. Mitrano, S. Caramazza +11
The phase diagrams of correlated systems like cuprates or pnictides high-temperature superconductors are characterized by a topological change of the Fermi surface under continuous…
Quasi-two-dimensional thermoelectricity in SnSe
V. Tayari, B. V. Senkovskiy, D. Rybkovskiy +14
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a…