Metal-insulator transition in monolayer MoS${}_2$ via contactless chemical doping

Abstract

Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically altering the layer or compromising its two-dimensionality. Here, a non-invasive technique is used to shift the chemical potential of monolayer MoS${}_2$ through p- and n-type doping of graphene (Gr), which remains a well-decoupled 2D substrate. With the intercalation of oxygen (O) under Gr, a nearly rigid Fermi level shift of 0.45 eV in MoS${}_2$ is demonstrated, whereas the intercalation of europium (Eu) induces a metal-insulator transition in MoS${}_2$, accompanied by a giant band gap reduction of 0.67 eV. Additionally, the effect of the substrate charge on 1D states within MoS${}_2$ mirror-twin boundaries (MTBs) is explored. It is found that the 1D nature of the MTB states is not compromised, even when MoS${}_2$ is made metallic. Furthermore, with the periodicity of the 1D states dependent on substrate-induced charging and depletion, the boundaries serve as chemical potential sensors functional up to room temperature.

References in corpus (38)

• Doping graphene with metal contacts
• Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
• Optical Spectrum of MoS${}_2$: Many-body Effects and Diversity of Exciton States
• First-principles study of the interaction and charge transfer between graphene and metals
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Magic continuum in twisted bilayer WSe2
• Two Dimensional Ising Superconductivity in Gated MoS${}_2$
• Strongly enhanced charge-density-wave order in monolayer NbSe${}_2$
• Characterization of collective ground states in single-layer NbSe2
• Superconductivity protected by spin-valley locking in ion-gated MoS2
• Dirac Cones and Minigaps for Graphene on Ir(111)
• Highly crystalline 2D superconductors
• Controlling many-body states by the electric-field effect in a two-dimensional material
• Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles
• Direct imaging of the band profile in single layer $Mo{S}_2$ on graphite: quasiparticle energy gap, metallic edge states and edge band bending
• Gate-induced Superconductivity in atomically thin MoS2 crystals
• Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
• Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides
• Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe2
• Topological superconductivity in monolayer transition metal dichalcogenides
• The mechanism of caesium intercalation of graphene
• Electrostatically Induced Superconductivity at the Surface of WS${}_2$
• A full superconducting dome of strong Ising protection in gated monolayer WS2
• Observation of monolayer valence band spin-orbit effect and induced quantum well states (QWS) in MoX2
• Giant spin-splitting and gap renormalization driven by trions in single-layer WS${}_2$/h-BN heterostructures
• Multi-Valley Superconductivity In Ion-Gated MoS2 Layers
• Tunneling spectroscopy of gate-induced superconductivity in MoS${}_2$
• Europium Underneath Graphene on Ir(111): Intercalation Mechanism, Magnetism, and Band Structure
• Tomonaga-Luttinger liquid in a box: electrons confined within MoS${}_2$ mirror twin boundaries
• Observation of Landau level-like quantizations at 77 K along a strained-induced graphene ridge
• Tuning the van der Waals Interaction of Graphene with Molecules via Doping
• Gated Tuned Superconductivity and Phonon Softening in Mono- and Bilayer MoS${}_2$
• Pseudodoping of Metallic Two-Dimensional Materials by The Supporting Substrates
• Band Bending and Valence Band Quantization at Line Defects in MoS${}_2$
• Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors
• Narrow photoluminescence peak of epitaxial MoS${}_2$ on graphene/Ir(111)
• Comprehensive tunneling spectroscopy of quasi-freestanding MoS${}_2$ on graphene on Ir(111)
• Manipulating Hubbard-type Coulomb blockade effect of metallic wires embedded in an insulator

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• Unconventional charge-density-wave gap in monolayer NbS${}_2$
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