activity
20152024
most citedStructural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

109 citations · 197 across the 7 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2024

Molecular order induced charge transfer in a C-topological insulator moiré heterostructure

Ram Prakash Pandeya, Konstantin P. Shchukin, Yannic Falke +9

We synthesize and spectroscopically investigate monolayer C on the topological insulator (TI) BiTe. This C/BiTe heterostructure is characterized by ex…

cond-mat.mes-hall2023★ 3 cited

Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping

Ekaterina Khestanova, Tatyana Ivanova, Roland Gillen +13

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping o…

cond-mat.mtrl-sci2021

Unraveling the Excitonic Transition and Associated Dynamics in Confined Long Linear Carbon-chains with Time-Resolved Resonance Raman Scattering

Jingyi Zhu, Robin Bernhardt, Weili Cui +9

Long linear carbon-chains have been attracting intense interest arising from the remarkable properties predicted and their potential applications in future nanotechnology. Here we…

cond-mat.mes-hall2018★ 27 cited

Narrow photoluminescence peak of epitaxial MoS on graphene/Ir(111)

Niels Ehlen, Joshua Hall, Boris V. Senkovskiy +10

We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS on graphene/Ir(111). This observation is explained…

cond-mat.mes-hall2018

Field Effect Transistors based on Networks of Highly Aligned, Chemically Synthesized N=7 Armchair Graphene Nanoribbons

Vikram Passi, Amit Gahoi, Boris V. Senkovskiy +4

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are…

cond-mat.mtrl-sci2018★ 57 cited

Quasi-two-dimensional thermoelectricity in SnSe

V. Tayari, B. V. Senkovskiy, D. Rybkovskiy +14

Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a…