Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

Abstract

Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE). Structural and electronic properties of this system are investigated using cross-section transmission electron microscopy (TEM) and electron spectroscopies which confirm good agreement with the properties of bulk h-BN. The latter are also corroborated by density functional theory (DFT) calculations, revealing that the first h-BN layer at the interface to Ni is metallic. Our investigations demonstrate that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h-BN.

text, 4 figures, and supplementary info

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Cited by in corpus (8)

• Tuning magnetic and transport properties in quasi-2D (Mn${}_{1-x}$Ni${}_x$)${}_2$P${}_2$S${}_6$ single crystals
• Assessment on Thermal Transport Properties of Group-III Nitrides: A Classical Molecular Dynamics Study with Transferable Tersoff Type Inter-atomic Potentials
• Dirac fermions in half-metallic ferromagnetic mixed Cr${}_{1\text{-}x}$M${}_x$PSe${}_3$ monolayers
• Realization of the electric-field driven "one-material"-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX3 (X: S, Se)
• Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride
• Spin-Current Control by Induced Electric-Polarization Reversal in Ni/hBN/Ni: A Cross-Correlation Material
• Quasi-free-standing monolayer hexagonal boron nitride on Ni
• High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission