109 citations · 197 across the 7 of their papers we have counts for
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Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
Ekaterina Khestanova, Tatyana Ivanova, Roland Gillen +13
Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping o…
Narrow photoluminescence peak of epitaxial MoS on graphene/Ir(111)
Niels Ehlen, Joshua Hall, Boris V. Senkovskiy +10
We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS on graphene/Ir(111). This observation is explained…
Field Effect Transistors based on Networks of Highly Aligned, Chemically Synthesized N=7 Armchair Graphene Nanoribbons
Vikram Passi, Amit Gahoi, Boris V. Senkovskiy +4
We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are…