4 papers
Origin of the flat band in heavily Cs doped graphene
N. Ehlen, M. Hell, G. Marini +6
A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method t…
Narrow photoluminescence peak of epitaxial MoS on graphene/Ir(111)
Niels Ehlen, Joshua Hall, Boris V. Senkovskiy +10
We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS on graphene/Ir(111). This observation is explained…
Field Effect Transistors based on Networks of Highly Aligned, Chemically Synthesized N=7 Armchair Graphene Nanoribbons
Vikram Passi, Amit Gahoi, Boris V. Senkovskiy +4
We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are…
Quasi-two-dimensional thermoelectricity in SnSe
V. Tayari, B. V. Senkovskiy, D. Rybkovskiy +14
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a…