184 citations · 529 across the 11 of their papers we have counts for
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Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping
Ayse Melis Aygar, Oliver Durnan, Bahar Molavi +3
Experimental setups for charge transport measurements are typically not compatible with the ultra-high vacuum conditions for chemical doping, limiting the charge carrier density th…
Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
Ekaterina Khestanova, Tatyana Ivanova, Roland Gillen +13
Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping o…
Origin of the flat band in heavily Cs doped graphene
N. Ehlen, M. Hell, G. Marini +6
A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method t…
Narrow photoluminescence peak of epitaxial MoS on graphene/Ir(111)
Niels Ehlen, Joshua Hall, Boris V. Senkovskiy +10
We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS on graphene/Ir(111). This observation is explained…
Field Effect Transistors based on Networks of Highly Aligned, Chemically Synthesized N=7 Armchair Graphene Nanoribbons
Vikram Passi, Amit Gahoi, Boris V. Senkovskiy +4
We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are…