Wideband and on-chip excitation for dynamical spin injection into graphene
arXiv:1806.09356 · doi:10.1103/PhysRevApplied.10.044053
Abstract
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin pumping driven by ferromagnetic resonance is a neat way to circumvent this problem as it produces a pure spin current in the absence of a charge current. Here, we show spin pumping into single layer graphene in micron scale devices. A broadband on-chip RF current line is used to bring micron scale permalloy (NiFe) pads to ferromagnetic resonance with a magnetic field tunable resonance condition. At resonance, a spin current is emitted into graphene, which is detected by the inverse spin hall voltage in a close-by platinum electrode. Clear spin current signals are detected down to a power of a few milliwatts over a frequency range of 2 GHz to 8 GHz. This compact device scheme paves the way for more complex device structures and allows the investigation of novel materials.
arXiv comment7 pages, 4 figures
References in corpus (29)
- Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
- Enhanced Gilbert Damping in Thin Ferromagnetic Films
- Graphene Spintronics
- Spin pumping and magnetization dynamics in metallic multilayers
- Quantifying spin Hall angles from spin pumping: Experiments and Theory
- Current-induced cleaning of graphene
- Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers
- Spin battery operated by ferromagnetic resonance
- Electrical detection of spin pumping due to the precessing magnetization of a single ferromagnet
- Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
- Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides
- Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/Gr/hBN heterostructures
- Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
- Spin Hall effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures
- Electrical spin injection into graphene through monolayer hexagonal boron nitride
- 24 \textmu m length spin relaxation length in boron nitride encapsulated bilayer graphene
- Dynamically-generated pure spin current in single-layer graphene
- Graphene-WS heterostructures for tunable spin injection and spin transport
- Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure
- Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers
- Spin transport in fully hexagonal boron nitride encapsulated graphene
- Large-scale BN tunnel barriers for graphene spintronics
- Dynamic Spin Injection into Chemical Vapor Deposited Graphene
- Permalloy-based carbon nanotube spin-valve
- On-chip detection of ferromagnetic resonance of a single submicron permalloy strip
- Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
- Fabrication and characterisation of nanospintronic devices
- Spin pumping into two-dimensional electron systems
- Gate controllable spin pumping in graphene via rotating magnetization
Cited by in corpus (8)
- Graphene nanoribbons for quantum electronics
- Chirality as Generalized Spin-Orbit Interaction in Spintronics
- Non-Contact Spin Pumping by Microwave Evanescent Fields
- Quantum Oscillations of Gilbert Damping in Ferromagnetic/Graphene Bilayer Systems
- Spin Seebeck Effect in Graphene
- Dynamical Majorana Ising spin response in a topological superconductor-magnet hybrid by microwave irradiation
- Spin Pumping into two-dimensional systems
- Resonant Edelstein and inverse-Edelstein effects, charge-to-spin conversion, and spin pumping from chiral-spin modes