On-Demand Spin-Orbit Interaction from Which-Layer Tunability in Bilayer Graphene

Abstract

Spin-orbit interaction (SOI) that is gate-tunable over a broad range is essential to exploiting novel spin phenomena. Achieving this regime has remained elusive because of the weakness of the underlying relativistic coupling and lack of its tunability in solids. Here we outline a general strategy that enables exceptionally high tunability of SOI through creating a which-layer spin-orbit field inhomogeneity in graphene multilayers. An external transverse electric field is applied to shift carriers between the layers with strong and weak SOI. Because graphene layers are separated by sub-nm scales, exceptionally high tunability of SOI can be achieved through a minute carrier displacement. A detailed analysis of the experimentally relevant case of bilayer graphene on a semiconducting transition metal dichalchogenide substrate is presented. In this system, a complete tunability of SOI amounting to its ON/OFF switching can be achieved. New opportunities for spin control are exemplified with electrically driven spin resonance and topological phases with different quantized intrinsic valley Hall conductivities.

8 pages, 3 figures

References in corpus (12)

• Gate-induced insulating state in bilayer graphene devices
• Magnetic Control of Valley Pseudospin in Monolayer WSe2
• Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
• Spin-Orbit Proximity Effect in Graphene
• Generation and Electric Control of Spin-Coupled Valley Current in WSe2
• Orbital mechanisms of electron spin manipulation by an electric field
• Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS${}_2$
• Proximity effects in bilayer graphene on monolayer WSe${}_2$: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
• Gate-controlled spin-orbit interaction in a parabolic GaAs/AlGaAs quantum well
• Devices with electrically tunable topological insulating phases
• Spin Injection in Quantum Wells with Spatially Dependent Rashba Interaction
• Spin-selective localization due to intrinsic spin-orbit coupling

Cited by in corpus (48)

• Van der Waals heterostructures for spintronics and opto-spintronics
• Colloquium: Spintronics in graphene and other two-dimensional materials
• Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
• Spin transport in graphene/transition metal dichalcogenide heterostructures
• Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/Gr/hBN heterostructures
• Large Quantum Anomalous Hall Effect in Spin-Orbit Proximitized Rhombohedral Graphene
• Twist-angle dependent proximity induced spin-orbit coupling in graphene/transition-metal dichalcogenide heterostructures
• Superconductivity and correlated phases in non-twisted bilayer and trilayer graphene
• Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene
• Quantum Hall Effect Measurement of Spin-Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe2 Heterostructures
• Superconductivity and quantized anomalous Hall in rhombohedral graphene
• Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature
• Strong and Tunable Spin Lifetime Anisotropy in Dual-Gated Bilayer Graphene
• Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
• Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe${}_2$
• Swapping Exchange and Spin-Orbit Coupling in 2D van der Waals Heterostructures
• Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides
• Spin transport in high-mobility graphene on WS${}_2$ substrate with electric-field tunable proximity spin-orbit interaction
• Enhanced superconductivity through virtual tunneling in Bernal bilayer graphene coupled to WSe${}_2$
• Majorana and parafermion corner states from two coupled sheets of bilayer graphene
• Electrical control of spin and valley in spin-orbit coupled graphene multilayers
• Correlated Phases in Spin-Orbit-Coupled Rhombohedral Trilayer Graphene
• Counterintuitive gate dependence of weak antilocalization in bilayer graphene/WSe${}_2$ heterostructures
• Electric-field-tunable valley Zeeman effect in bilayer graphene heterostructures: Realization of the spin-orbit valve effect
• Ballistic transport spectroscopy of spin-orbit-coupled bands in monolayer graphene on WSe${}_2$
• Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr${}_2$Ge${}_2$Te${}_6$
• Spin-orbit proximity in MoS${}_2$/bilayer graphene heterostructures
• Superconductivity and spin canting in spin-orbit proximitized rhombohedral trilayer graphene
• Single and bilayer graphene on the topological insulator Bi${}_2$Se${}_3$: Electronic and spin-orbit properties from first principles
• Experimental observation of spin-split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
• Twist-angle dependent proximity induced spin-orbit coupling in graphene/topological insulator heterostructures
• Large spin-relaxation anisotropy in bilayer-graphene/WS${}_2$ heterostructures
• Band Gap Opening in Bilayer Graphene-CrCl${}_3$/CrBr${}_3$/CrI${}_3$ van der Waals Interfaces
• Symmetry-broken metallic orders in spin-orbit-coupled Bernal bilayer graphene
• Tunable Quantum Hall Edge Conduction in Bilayer Graphene through Spin-Orbit Interaction
• Valley polarization, magnetization, and superconductivity in bilayer graphene near the van Hove singularity
• Stabilizing the inverted phase of a WSe${}_2$/BLG/WSe${}_2$ heterostructure via hydrostatic pressure
• Theory of Spin Injection in Two-dimensional Metals with Proximity-Induced Spin-Orbit Coupling
• Weak Localisation Driven by Pseudospin-Spin Entanglement
• Electrically controlled crossover between $2\pi$- and $4\pi$-Josephson effects through topologically-confined channels in silicene
• Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor
• Electric field tunable spin-orbit gap in a bilayer graphene/WSe${}_2$ quantum dot
• Weak localization as probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe${}_2$
• Room-temperature spin-lifetime anisotropy exceeding 60 in bilayer graphene spin valves proximity coupled to WSe${}_2$
• Increasing the proximity induced spin-orbit coupling in bilayer graphene/WSe${}_2$ heterostructures with pressure
• Gapfull and gapless $1$D Topological Superconductivity in Spin-Orbit Coupled Bilayer Graphene
• Valley-Polarized Quantum Anomalous Hall Phase in Bilayer Graphene with Layer-Dependent Proximity Effects
• Tuning proximity-induced spin-orbit coupling in graphene/WSe${}_2$ heterostructures