High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors

Abstract

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, we perform a thermogravimetric analysis of bulk TiS3 and compare the results with density functional theory (DFT) and Kinetic Monte Carlo calculations. We conclude that oxidation of TiS3 and subsequent desorption of sulfur atoms plays an important role in the electrical breakdown of the material in ambient conditions. Our results show that TiS3 is an attractive material for high power applications and lend insight to the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices.

arXiv comment24 pages, 9 figures main text, 4 figures supporting information

References in corpus (19)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Isolation and characterization of few-layer black phosphorus
• Energy Dissipation and Transport in Nanoscale Devices
• Photocurrent generation with two-dimensional van der Waals semiconductors
• Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors
• Breakdown Current Density of Graphene Nano Ribbons
• Titanium trisulfide monolayer: A new direct-gap semiconductor with high and anisotropic carrier mobility
• TiS3 transistors with tailored morphology and electrical properties
• Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors
• Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers
• Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties
• Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets
• Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors
• Electronic bandgap and exciton binding energy of layered semiconductor TiS3
• Vacancy Formation and Oxidation Characteristics of Single Layer TiS3
• Electronic Thermal Conductivity Measurements in Intrinsic Graphene
• Fabrication of hybrid molecular devices using multi-layer graphene break junctions

Cited by in corpus (6)

• Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides
• Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction
• Tunable Photodetectors via in situ Thermal Conversion of TiS${}_3$ to TiO${}_2$
• Raman Fingerprint of Pressure-Induced Phase Transitions in TiS3 Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions
• Multi-terminal electronic transport in boron nitride encapsulated TiS${}_3$ nanosheets
• Charge Transport in Electronic Devices Printed with Inks of Quasi-1D van der Waals Materials