Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Abstract

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for opto-electronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the charge transport in black phosphorus at room temperature; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs). The effect opens up opportunities for future development of electro-mechanical transducers based on black phosphorus, and we demonstrate strain gauges constructed from black phosphorus thin crystals.

References in corpus (26)

• Black phosphorus field-effect transistors
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• Bandgap Engineering of Strained Monolayer and Bilayer MoS2
• Isolation and characterization of few-layer black phosphorus
• Strain-induced gap modification in black phosphorus
• Local strain engineering in atomically thin MoS2
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Electric field effect in ultrathin black phosphorus
• Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
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• Direct Observation of Layer-Dependent Electronic Structure in Phosphorene
• Negative Poisson's Ratio in Single-Layer Black Phosphorus
• Strain engineering in semiconducting two-dimensional crystals
• Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
• Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
• Tuning of the electronic and optical properties of single layer black phosphorus by strain
• Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides
• Strong modulation of optical properties in black phosphorus through strain-engineered rippling
• Pressure-induced Lifshitz transition in black phosphorus
• Resolving and Tuning Mechanical Anisotropy in Black Phosphorus via Nanomechanical Multimode Resonance Spectromicroscopy
• Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices
• Strain-controlled fundamental gap and structure of bulk black phosphorus
• Inverse Funnel Effect of Excitons in Strained Black Phosphorus
• Electronic structure and optic absorption of phosphorene under strain
• Multi-scale approach for strain-engineering of phosphorene

Cited by in corpus (18)

• Strain-Enhanced Mobility of Monolayer MoS2
• Nanoelectromechanical Sensors based on Suspended 2D Materials
• Strain-tunable van der Waals interactions in few-layer black phosphorus
• Largely tunable band structures of few-layer InSe by uniaxial strain
• The Optical Properties and Plasmonics of Anisotropic 2-Dimensional Materials
• Strain-engineering the Schottky barrier and electrical transport on MoS2
• Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors
• The optical properties of few-layer InSe
• Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain
• From Anomalous to Normal: Temperature Dependence of the Band Gap in Two-Dimensional Black Phosphorus
• Strain-Engineered Widely-Tunable Perfect Absorption Angle in Black Phosphorus from First-Principles
• First-Principles Mapping of the Electronic Properties of Two-Dimensional Materials for Strain-Tunable Nanoelectronics
• Electronic structure of few-layer black phosphorus from $\mu$-ARPES
• Phosphorene as a nanoelectromechanical material
• Comparison of Optical Response from DFT Random Phase Approximation and Low-Energy Effective Model: Strained Phosphorene
• Continuously tunable uniaxial strain control of van der Waals heterostructure devices
• Ballistic graphene array for ultra-high pressure sensing
• Non-adiabatic suppression of 3D excitonic screening in black phosphorus by mid-infrared pulses