842 citations · 3.1k across the 12 of their papers we have counts for
12 papers
Cascade of multi-electron bubble phases in monolayer graphene at high Landau level filling
Fangyuan Yang, Ruiheng Bai, Alexander A. Zibrov +6
The phase diagram of an interacting two-dimensional electron system in a high magnetic field is enriched by the varying form of the effective Coulomb interaction, which depends str…
Energy gap of the even-denominator fractional quantum Hall state in bilayer graphene
Alexandre Assouline, Taige Wang, Haoxin Zhou +8
Bernal bilayer graphene hosts even denominator fractional quantum Hall states thought to be described by a Pfaffian wave function with nonabelian quasiparticle excitations. Here we…
Isospin magnetism and spin-triplet superconductivity in Bernal bilayer graphene
Haoxin Zhou, Ludwig Holleis, Yu Saito +7
We report the observation of spin-polarized superconductivity in Bernal bilayer graphene when doped to a saddle-point van Hove singularity generated by large applied perpendicular…
Experimental determination of the energy per particle in partially filled Landau levels
Fangyuan Yang, Alexander A. Zibrov, Ruiheng Bai +4
We describe an experimental technique to measure the chemical potential, , in atomically thin layered materials with high sensitivity and in the static limit. We apply the techn…
Isospin Pomeranchuk effect and the entropy of collective excitations in twisted bilayer graphene
Yu Saito, Fangyuan Yang, Jingyuan Ge +6
In condensed matter systems, higher temperatures typically disfavors ordered phases leading to an upper critical temperature for magnetism, superconductivity, and other phenomena.…
Electrical switching of magnetic order in an orbital Chern insulator
Hryhoriy Polshyn, Jihang Zhu, Manish A. Kumar +8
Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favors ground states with non-zero electron spin. As a result, contro…
Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors
Fangyuan Yang, Zuocheng Zhang, Nai Zhou Wang +8
The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the g…
Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors
Zuocheng Zhang, Likai Li, Jason Horng +10
Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material.…
Direct Observation of Layer-Dependent Electronic Structure in Phosphorene
Likai Li, Jonghwan Kim, Chenhao Jin +14
Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new twodimensional (2D) material that holds promise for electronic and photonic technology. Here w…
Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas
Likai Li, Fangyuan Yang, Guo Jun Ye +10
Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enri…
Gate-tunable Phase Transitions in 1T-TaS
Yijun Yu, Fangyuan Yang, Xiu Fang Lu +11
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensio…
Fully Gapped s-wave-like Superconducting State and Electronic Structures in the Ir0.95Pd0.05Te2 Single Crystals with Strong Spin-orbital Coupling
D. J. Yu, F. Yang, Lin Miao +15
Due to the large spin-orbital coupling in the layered 5d-transition metal chalcogenides compound, the occurrence of superconductivity in Ir2-xPdxTe2 offers a good chance to search…