Experimental demonstration of complete 180 degree reversal of magnetization in isolated Co-nanomagnets on a PMN-PT substrate with voltage generated strain

Abstract

Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltage-generated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in non-volatile magnetic memory has been hindered by the fundamental inability of stress/strain to rotate magnetization by full 180 degrees. Normally, stress/strain can rotate the magnetization of a shape anisotropic elliptical nanomagnet by only up to 90 degrees, resulting in incomplete magnetization reversal. Recently, we predicted that applying uniaxial stress sequentially along two different axes that are not collinear with the major or minor axis of the elliptical nanomagnet will rotate the magnetization by full 180 degrees. Here, we demonstrate this complete 180 degree rotation in elliptical Co-nanomagnets (fabricated on a piezoelectric substrate) at room temperature. The two stresses are generated by sequentially applying voltages to two pairs of shorted electrodes placed on the substrate such that the line joining the centers of the electrodes in one pair intersects the major axis of a nanomagnet at ~+30 degrees and the line joining the centers of the electrodes in the other pair intersects at ~ -30 degrees. A finite element analysis has been performed to determine the stress distribution underneath the nanomagnets when one or both pairs of electrodes are activated, and this has been approximately incorporated into a micromagnetic simulation of magnetization dynamics to confirm that the generated stress can produce the observed magnetization rotations. This result portends an extremely energy-efficient non-volatile "straintronic" memory technology predicated on writing bits in nanomagnets with electrically generated stress.

References in corpus (15)

• Spin torque switching with the giant spin Hall effect of tantalum
• Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3
• Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields
• Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions
• Magneto-ionic Control of Interfacial Magnetism
• Electric-field control of spin-orbit torque in a magnetically doped topological insulator
• Hybrid spintronics and straintronics: A magnetic technology for ultra low energy computing and signal processing
• Bennett clocking of nanomagnetic logic using electrically induced rotation of magnetization in multiferroic single-domain nanomagnets
• Experimental Clocking of Nanomagnets with Strain for Ultra Low Power Boolean Logic
• Energy dissipation and switching delay in stress-induced switching of multiferroic devices in the presence of thermal fluctuations
• Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology
• Magnetization Dynamics, Bennett Clocking and Associated Energy Dissipation in Multiferroic Logic
• Binary switching in a symmetric potential landscape
• Energy-efficient magnetoelastic non-volatile memory
• Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, straintronic memory cell for extremely low energy operation

Cited by in corpus (23)

• p-Bits for Probabilistic Spin Logic
• Straintronics: Manipulating the Magnetization of Magnetostrictive Nanomagnets with Strain for Energy-Efficient Applications
• Error Probability in Magneto-elastic Switching of Non-ideal Nanomagnets with Defects: A Case Study for the Viability of Straintronic Logic and Memory
• Energy-efficient switching of nanomagnets for computing: Straintronics and other methodologies
• Electrical manipulation of magnetic anisotropy in a Fe${}_{81}$Ga${}_{19}$/PMN-PZT magnetoelectric multiferroic composite
• Applications of Nanomagnets as Dynamical Systems
• Tailoring ferromagnetism through electrically controlled morphology
• Skyrmion-mediated Nonvolatile Ternary Memory
• Resonant Acoustic Wave Assisted Spin-Transfer-Torque Switching of Nanomagnets
• Magneto-elastic switching of magnetostrictive nanomagnets with in-plane shape anisotropy
• Switching on superferromagnetism
• Equivalent Circuit for Magnetoelectric Read and Write Operations
• Spin-Transfer-Torque Induced Spatially Nonuniform Switching in Ferrimagnets
• Straintronic magnetic tunnel junctions for analog computation: A perspective
• A Magnetoelectric Memory Device Based on Pseudo-Magnetization
• Proximal quantum control of spin and spin ensemble with highly localized control field from skyrmions
• Strain assisted magnetization switching in ordered nanomagnets of CoFe2O4/SrRuO3/PMNPT hetrostructures
• Polarized Neutron Reflectometry Study of Depth Dependent Magnetization Variation in Co Thin Film on a PMN-PT Substrate
• Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO
• Anomalous switching pattern in the ferrimagnetic memory cell
• Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory
• Angle Selective Piezoelectric Strain Controlled Magnetization Switching in Artificial Spin Ice Based Multiferroic System
• Voltage Controlled Energy Efficient Domain Wall Synapses with Stochastic Distribution of Quantized Weights in the Presence of Thermal Noise and Edge Roughness