Imaging Spectroscopic Ellipsometry of Mono- and Few-layer MoS2

Abstract

Micromechanically exfoliated mono- and multilayers of molybdenum disulfide (MoS2) are investigated by spectroscopic imaging ellipsometry. In combination with knife edge illumination, MoS2 flakes can be detected and classified on arbitrary flat and also transparent substrates with a lateral resolution down to 1 to 2 um. The complex dielectric functions from mono- and trilayer MoS2 are presented. They are extracted from a multilayer model to fit the measured ellipsometric angles employing an anisotropic and an isotropic fit approach. We find that the energies of the critical points of the optical constants can be treated to be independent of the utilized model, whereas the magnitude of the optical constants varies with the used model. The anisotropic model suggests a maximum absorbance for a MoS2 sheet supported by sapphire of about 14 % for monolayer and of 10 % for trilayer MoS2. Furthermore, the lateral homogeneity of the complex dielectric function for monolayer MoS2 is investigated with a spatial resolution of 2 um. Only minor fluctuations are observed. No evidence for strain, for a significant amount of disorder or lattice defects can be found in the wrinkle-free regions of the MoS2 monolayer from complementary Raman spectroscopy measurements. We assume that the minor lateral variation in the optical constants are caused by lateral modification in the van der Waals interaction presumably caused by the preparation using micromechanical exfoliation and viscoelastic stamping.

Manuscript and Supplementary Material

References in corpus (7)

• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
• Visibility of dichalcogenide nanolayers
• Electrical Control of Optical Properties of Monolayer MoS${}_2$
• Electrons and holes in phosphorene
• Photogating of mono- and few-layer MoS2
• Enhanced Visibility of MoS2, MoSe2, WSe2 and Black Phosphorus: Making Optical Identification of 2D Semiconductors Easier

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