A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP
arXiv:1501.03597 · doi:10.1063/1.4906562
Abstract
The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at./%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at./% Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.
21 pages, 8 figures, to be published at J. Appl. Phys
References in corpus (9)
- Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
- Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
- Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic (Ga,Mn)As: Impurity bands inside the band gap
- Weak localization in GaMnAs: evidence of impurity band transport
- Molecular Beam Epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
- Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting
- Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP
- Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing
- Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy