activity
20122020
most citedBreaking the doping limit in silicon by deep impurities

71 citations · 238 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2020★ 16 cited

Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Mao Wang, A. Debernardi, Wenxu Zhang +7

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadban…

cond-mat.mes-hall2019★ 45 cited

Suppressed Auger scattering and tunable light emission of Landau-quantized massless Kane electrons

D. B. But, M. Mittendorff, C. Consejo +9

The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally a…

cond-mat.mtrl-sci2018★ 71 cited

Breaking the doping limit in silicon by deep impurities

Mao Wang, A. Debernardi, Y. Berencén +10

N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here…

cond-mat.mtrl-sci2018★ 71 cited

Extended Infrared Photoresponse in Te-Hyperdoped Si at Room Temperature

Mao Wang, Y. Berencén, E. García-Hemme +11

Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existi…

cond-mat.mtrl-sci2018★ 12 cited

Nematicity of correlated systems driven by anisotropic chemical phase separation

Ye Yuan, René Hübner, Magdalena Birowska +12

The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge…

cond-mat.mtrl-sci2017★ 14 cited

Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing

F. Liu, S. Prucnal, Y. Berencén +9

We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation…