Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene

Abstract

The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility $\mu$ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities ($\mu \propto T^{-\gamma }$) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-$\kappa$ overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced.

arXiv comment10 pages, 4 figures

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Cited by in corpus (9)

• Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
• Mobility anisotropy in monolayer black phosphorus due to charged impurities
• Electronic Structure and the Properties of Phosphorene Systems
• Integer and Fractional Quantum Hall effect in Ultra-high Quality Few-layer Black Phosphorus Transistors
• Probing the anisotropic behaviors of black phosphorus by transmission electron microscope, angular-dependent Raman spectra and electronic transports measurements
• Temperature dependent anisotropic charge carrier mobility limited by ionized impurity scattering in thin-layer black phosphorus
• Pseudospin Electronics in Phosphorene Nanoribbons
• Strain engineering the charged-impurity-limited carrier mobility in phosphorene
• An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors