Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
arXiv:1407.3430 · doi:10.1021/nn5027388
Abstract
Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm2/Vs, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependence direct bandgap. However, p-n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p-n heterojunction. Upon illumination, these ultra-thin p-n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm, and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p-n diodes show promise for broadband photodetection and solar energy harvesting.
37 pages
References in corpus (7)
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- Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst
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- Tuning of the electronic and optical properties of single layer black phosphorus by strain
- In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
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- Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy
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- Device physics of van der Waals heterojunction solar cells
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- The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene
- Mechanical Properties of Phosphorene Nanotubes: A Density Functional Tight-Binding Study
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- First-principles Study of the Interactions of Electron Donor and Acceptor Molecules with Phosphorene