Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

Abstract

We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs.

arXiv comment4 pages, 4 figures, submitted for publication

References in corpus (23)

• Quantum Computation with Quantum Dots
• Spins in few-electron quantum dots
• Driven coherent oscillations of a single electron spin in a quantum dot
• Possible Spin Polarization in a One-Dimensional Electron Gas
• The Addition Spectrum of a Lateral Dot from Coulomb and Spin Blockade Spectroscopy
• Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
• Coherent control of three-spin states in a triple quantum dot
• Coherent control and suppressed nuclear feedback of a single quantum dot hole qubit
• Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits
• Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
• Optical control of one and two hole spins in interacting quantum dots
• Electrical control over single hole spins in nanowire quantum dots
• Conditional operation of a spin qubit
• Interaction Corrections to Two-Dimensional Hole Transport in Large $r_s$ Limit
• Single-hole transistor in p-type GaAs/AlGaAs heterostructures
• Magnetotransport in C-doped AlGaAs heterostructures
• Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs
• Fabrication and characterization of an induced GaAs single hole transistor
• Evidence for localization and 0.7 anomaly in hole quantum point contacts
• Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas
• The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
• Mesoscopic structures and 2D hole systems in fully field effect controlled heterostructures
• Hole transport in p-type GaAs quantum dots and point contacts

Cited by in corpus (10)

• Semiconductor Spin Qubits
• Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis
• Recent advances in hole-spin qubits
• Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
• First-principles hyperfine tensors for electrons and holes in GaAs and silicon
• Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device
• Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots
• Spin-orbit enabled quantum transport channels in a two-hole double quantum dot
• Maximizing the purity of a qubit evolving in an anisotropic environment
• G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors