Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

Abstract

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all-2D transistor is further integrated with a multilayer graphene charge trapping layer into a device that can be operated as a nonvolatile memory cell. Because of its band gap and 2D nature, monolayer MoS2 is highly sensitive to the presence of charges in the charge trapping layer, resulting in a factor of 10000 difference between memory program and erase states. The two-dimensional nature of both the contact and the channel can be harnessed for the fabrication of flexible nanoelectronic devices with large-scale integration.

Submitted version

References in corpus (9)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Boron nitride substrates for high-quality graphene electronics
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Atomically thin boron nitride: a tunnelling barrier for graphene devices
• Current-induced cleaning of graphene
• Multicomponent fractional quantum Hall effect in graphene
• Visibility of dichalcogenide nanolayers
• Functionalization of Single Layer MoS${}_2$ Honeycomb Structures

Cited by in corpus (27)

• Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
• Electrical Transport Properties of Single-Layer WS2
• High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
• Van der Waals trilayers and superlattices: Modification of electronic structures of MoS2 by intercalation
• Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide
• Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2
• Hysteresis in the transfer characteristics of MoS2 transistors
• A Universal, Rapid Method for Clean Transfer of Nanostructures onto Various Substrates
• MoS2 Transistors Operating at Gigahertz Frequencies
• Proximity effects in bilayer graphene on monolayer WSe${}_2$: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
• Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics
• Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS${}_2$
• Franckeite: a naturally occurring van der Waals heterostructure
• Quantum spin Hall states in graphene interacting with WS${}_2$ or WSe${}_2$
• Mesoscale Imperfections in MoS2 Atomic Layers Grown by Vapor Transport Technique
• All-Metallic Vertical Transistors Based on Stacked Dirac Materials
• Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors
• Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures
• Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures
• Exciton formation assisted by longitudinal optical phonons in monolayer transition metal dichalcogenides
• Transport in disordered monolayer molybdenum disulfide nanoflakes: evidence for inhomogeneous charge transport
• High-frequency, scaled MoS2 transistors
• The dynamics of copper intercalated molybdenum ditelluride
• Tunable charge-trap memory based on few-layer MoS2
• Large-area Epitaxial Monolayer MoS2
• Etching-free transfer of wafer-scale MoS2 films
• Manifestation of two-channel nonlocal spin transport in the shapes of the Hanle curves