Etching-free transfer of wafer-scale MoS2 films

Abstract

How to transfer MoS2 films from growth substrates onto target substrates is a critical issue for its practical applications. However, it remains a great challenge to avoid the sample degradation and substrate destruction, since current transfer method inevitably employs a wet chemical etching process. Herein, we develop an etching-free transfer method for transferring wafer-scale MoS2 films onto arbitrary substrates by using ultrasonication. Briefly, the collapse of ultrasonication-generated microbubbles at the interface between polymer-coated MoS2 film and substrates induce sufficient force to delaminate the MoS2 films. Using this method the MoS2 films can be transferred from all the substrates (silica, mica, strontium titanate, sapphire) and remains the original sample morphology and quality. This method guarantees a simple transfer process, allows the reuse of growth substrates, without the presence of any hazardous etchants. The etching-free transfer method may promote the broad applications of MoS2 in electronics, optoelectronics and catalysis.

References in corpus (16)

• Electric Field Effect in Atomically Thin Carbon Films
• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Atomically thin MoS2: A new direct-gap semiconductor
• 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
• Control of valley polarization in monolayer MoS2 by optical helicity
• Valley polarization in MoS2 monolayers by optical pumping
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Observation of tightly bound trions in monolayer MoS2
• Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
• The Valley Hall Effect in MoS2 Transistors
• Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• Electrical Tuning of Valley Magnetic Moment via Symmetry Control
• Measurement of mobility in dual-gated MoS2 transistors
• A Universal, Rapid Method for Clean Transfer of Nanostructures onto Various Substrates