Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

Abstract

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question.

16 pages, 3 figures, 1 table

References in corpus (2)

• Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
• Tunneling Spin Injection into Single Layer Graphene

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