Silicon nitride gate dielectrics and bandgap engineering in graphene layers

Abstract

We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band-gap or band-overlap in the different layers.

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• Phonon mediated interlayer conductance in twisted graphene bilayers
• Multilayer graphene under vertical electric field
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• Metallic and Insulating Adsorbates on Graphene
• Graphene on Silicon Modulators
• Evidence for local spots of viscous electron flow in graphene at moderate mobility
• Graphene Side Gate Engineering
• Nucleation and growth of HfO${}_2$ layers on graphene by CVD
• Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC
• Multilayer graphene nanoribbon under vertical electric field
• Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers
• Origin of the Temperature Collapse of the Electric Conductivity in Bilayer Graphene
• Continuous-distribution puddle model for conduction in trilayer graphene
• Nanoscale Graphene Electro-Optic Modulators
• Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)