Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure

Abstract

We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing.

20 pages, 8 figures

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Cited by in corpus (10)

• Silicon Quantum Electronics
• Theory of Single Electron Spin Relaxation in Si/SiGe Lateral Coupled Quantum Dots
• Few electron double quantum dot in an isotopically purified ${}^{28}$Si quantum well
• Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots
• Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
• Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures
• Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots
• Determination of energy scales in few-electron double quantum dots
• Hyperfine induced electron spin and entanglement dynamics in double quantum dots: The case of separate baths
• Semiconductor-based electron flying qubits: Review on recent progress accelerated by numerical modelling