Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers
arXiv:0708.2092 · doi:10.1063/1.2806966
Abstract
We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAs/p- GaAs/(Ga,Mn)As trilayers show that the exchange coupling diminishes with spatial separation between the layers.
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- Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures
- Exchange bias and training effects in antiferromagnetically coupled La0.7Sr0.3MnO3 / SrRuO3 superlattices
- Imaging the antiparallel magnetic alignment of adjacent Fe and MnAs thin films
- Structural and Magnetic Characteristics of MnAs Nanoclusters Embedded in Be-doped GaAs
- Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions