506 citations
- Forschungsverbund BerlinDE128 papers
- Centre National de la Recherche ScientifiqueFR22 papers
- Leibniz Institute for Crystal GrowthDE15 papers
- Humboldt-Universität zu BerlinDE14 papers
- RWTH Aachen UniversityDE14 papers
- Universidad Autónoma de MadridES13 papers
- Laboratoire National des Champs Magnétiques IntensesFR10 papers
- University of SheffieldGB10 papers
- Helmholtz-Zentrum Berlin für Materialien und EnergieDE9 papers
- Pennsylvania State UniversityUS9 papers
- United States Naval Research LaboratoryUS9 papers
- Institute of Computational Mathematics and Mathematical GeophysicsRU8 papers
135 papers · 1 filter
Molecular Beam Epitaxy of AlScN Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
Adriano Notarangelo, Rudeesun Songmuang, Mostafa Saleh +10
We study the molecular beam epitaxy of self-assembled AlScN nanowires on conductive TiN layers and demonstrate their application in piezoelectric na…
Unravelling the oxygen influence in cubic bixbyite InO on Raman active phonon modes by isotope studies
Johannes Feldl, Roland Gillen, Janina Maultzsch +5
In this study, we performed comprehensive investigations on the Raman active phonon modes in cubic bixbyite InO, an important oxide based, wide-bandgap semiconductor. Funda…
-GaO(001) surface reconstructions from first principles and experiment
Konstantin Lion, Piero Mazzolini, Kingsley Egbo +4
We present a comprehensive investigation of reconstructions on -GaO(001) combining first-principles calculations with experimental observations. Using ab initio atomisti…
Triplet Excitons Reconcile Charge Generation and Recombination in Low-Offset Organic Solar Cells: Efficiency Limits from a 5-State Model
Jonathan L. Langentepe-Kong, Manasi Pranav, Safa Shoaee +1
The power conversion efficiency of organic solar cells has recently improved beyond 20%. The active layers of these devices comprise of at least two organic semiconductors, forming…
Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices
Furkan Turker, Bohan Xu, Chengye Dong +15
High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and…
Band gaps and phonons of quasi-bulk rocksalt ScN
J. Grümbel, Y. Oshima, A. Dubroka +3
ScN is an emerging transition metal nitride with unique physical properties arising from the d-electrons of Sc. In this work we present the results of optical characterization tech…