119 citations · 1.5k across the 44 of their papers we have counts for
20 papers · 1 filter
Nonlinear Electrical Spin Conversion in a Biased Ferromagnetic Tunnel Contact
R. Jansen, A. Spiesser, H. Saito +4
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-describe…
Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
Y. Fujita, M. Yamada, M. Tsukahara +5
We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias volta…
Pure spin current transport in a SiGe alloy
T. Naito, M. Yamada, M. Tsukahara +3
Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with SiGe, we study pure spin current transport in a degenerate Si…
Efficient spin transport along Si 100 at room temperature
M. Ishikawa, M. Tsukahara, Y. Fujita +4
We find efficient spin transport in Si at room temperature in lateral spin valves (LSVs). When the crystal orientation of the spin-transport channel in LSVs is changed from $\langl…
Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
Y. Ando, K. Kasahara, S. Yamada +6
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barr…
Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of CoFeSi and FeSi
K. Hamaya, N. Hashimoto, S. Oki +3
We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with Heusler-compound electrodes, CoFeSi (CFS) or FeSi (FS). T…
Electric-field control of spin accumulation signals in silicon at room temperature
Y. Ando, Y. Maeda, K. Kasahara +8
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/-Si con…
Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces
K. Kasahara, S. Yamada, K. Sawano +2
The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the FeSi/Ge(111) heterostructure developed originally, we ca…
Room-temperature generation of giant pure spin currents using CoFeSi spin injectors
T. Kimura, N. Hashimoto, S. Yamada +2
Generation, manipulation, and detection of a pure spin current, i.e., the flow of spin angular momentum without a charge current, are prospective approaches for realizing next-gene…
Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier
Y. Ando, K. Hamaya, K. Kasahara +5
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of…
Dynamic Nuclear Polarization in a Quantum Hall Corbino Disk
Minoru Kawamura, Hiroyuki Takahashi, Satoru Masubuchi +4
Electrical polarization of nuclear spins is studied in a Corbino disk under a breakdown regime of the quantum Hall effect (QHE). Since the edge channels are completely absent in th…
Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes
K. Hamaya, M. Kitabatake, K. Shibata +7
Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of…
Dynamic nuclear polarization and Knight shift measurements in a breakdown regime of integer quantum Hall effect
M. Kawamura, H. Takahashi, S. Masubuchi +4
Nuclear spins are polarized electrically in a breakdown regime of an odd-integer quantum Hall effect (QHE). Electron excitation to the upper Landau subband with the opposite spin p…
Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve
K. Hamaya, M. Kitabatake, K. Shibata +6
We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap elect…
Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect
H. Takahashi, M. Kawamura, S. Masubuchi +4
Using a conventional Hall-bar geometry with a micro-metal strip on top of the surface, we demonstrate an electrical coherent control of nuclear spins in an AlGaAs/GaAs semiconducto…
Electrical polarization of nuclear spins in a breakdown regime of quantum Hall effect
M. Kawamura, H. Takahashi, K. Sugihara +3
We have developed a method for electrical polarization of nuclear spins in quantum Hall systems. In a breakdown regime of odd-integer quantum Hall effect (QHE), excitation of elect…
Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
K. Hamaya, S. Masubuchi, M. Kawamura +7
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ show…
Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device
S. Masubuchi, K. Hamaya, T. Machida
We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electro…
Knight shift detection using gate-induced decoupling of the hyperfine interaction in quantum Hall edge channels
S. Masubuchi, K. Hamaya, T. Machida
A method for the observation of the Knight shift in nanometer-scale region in semiconductors is developed using resistively detected nuclear magnetic resonance (RDNMR) technique in…
Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system
K. Hamaya, S. Masubuchi, K. Hirakawa +5
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved…