From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor
arXiv:cond-mat/9807233 · doi:10.1103/PhysRevLett.81.5225
Abstract
We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. When an unpaired electron is localized within the transistor, the Kondo effect is observed. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a cross-over between the Kondo and mixed-valence regimes of the Anderson model.
3 pages plus one 2 page postscript file of 5 figures. Submitted to PRL
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- Mean Field Decoupling of Single Impurity Anderson Model through Auxiliary Majorana Fermions
- A new approach to the Kondo effect: sophomore's dream function and Lee-Yang zeros
- Ginzburg-Landau theory for the magnetic and structural transitions in La(CaSr)MnO
- Quantum Dots: Coulomb Blockade, Mesoscopic Fluctuations, and Qubit Decoherence
- Signatures of the Correlated-Hopping Interaction in Non-Linear Transport through a Quantum Dot
- Towards verified numerical renormalization group calculations
- Numerical solution of large scale Hartree-Fock-Bogoliubov equations
- Cotunneling through quantum dot with even number of electrons