Electronic and magnetic properties of single chalcogen vacancies in MoS${}_2$/Au(111)

Abstract

Two-dimensional (2D) transition-metal dichalcogenides (TMDC) are considered highly promising platforms for next-generation optoelectronic devices. Owing to its atomically thin structure, device performance is strongly impacted by a minute amount of defects. Although defects are usually considered to be disturbing, defect engineering has become an important strategy to control and design new properties of 2D materials. Here, we produce single S vacancies in a monolayer of MoS${}_2$ on Au(111). Using a combination of scanning tunneling and atomic force microscopy, we show that these defects are negatively charged and give rise to a Kondo resonance, revealing the presence of an unpaired electron spin exchange coupled to the metal substrate. The strength of the exchange coupling depends on the density of states at the Fermi level, which is modulated by the moiré structure of the MoS${}_2$ lattice and the Au(111) substrate. In the absence of direct hybridization of MoS${}_2$ with the metal substrate, the S vacancy remains charge-neutral. Our results suggest that defect engineering may be used to induce and tune magnetic properties of otherwise non-magnetic materials.

References in corpus (11)

• 2D materials and van der Waals heterostructures
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• Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
• Long-range Kondo signature of a single magnetic impurity
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• Vibronic response of a spin-1/2 state from a carbon impurity in two-dimensional WS${}_2$
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• Tuning a two-impurity Kondo system by a moiré superstructure
• A Hybrid-DFT Study of Intrinsic Point Defects in $M{X}_2$ ($M$=Mo, W; $X$=S, Se) Monolayers

Cited by in corpus (3)

• Tip-induced creation and Jahn-Teller distortions of sulfur vacancies in single-layer MoS${}_2$
• An atomic-scale perspective on individual thiol-terminated molecules anchored to single S vacancies in MoS${}_2$
• Thermodynamic and energetic constraints on transition probabilities of small-scale quantum systems