Studying the single--electron transistor by photoionization

Abstract

We present theoretical results demonstrating that photoionization can be a useful tool for investigating single--electron transistors. Suggestions are given on how to conduct experiments using photoionization alone or in combination with transport measurements.

References in corpus (6)

• Kondo Physics in a Single Electron Transistor
• From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor
• The Kondo Effect in the Unitary Limit
• Kondo Effect in Single Quantum Dot Systems --- Study with Numerical Renormalization Group Method ---
• Magnetotransport through a strongly interacting quantum dot
• On a method to calculate conductance by means of the Wigner function: two critical tests

Cited by in corpus (4)

• The photoionization cross section of a hydrogenic impurity in a multi-layered spherical quantum dot
• Extending the Newns-Anderson model to allow nanotransport studies through molecules with floppy degrees of freedom
• Applying the extended molecule approach to correlated electron transport: important insight from model calculations
• Far-infrared absorption in single-electron transistors: Theoretical results and experiment proposal