Tunnel magnetoresistance and temperature related effects in magnetic tunnel junctions with embedded nanoparticles

Abstract

Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was simulated in range of double barrier approach, which was integrated into the model of the magnetic point-like contact. The resonant TMR conditions and temperature impact were explored in detail. Moreover, the possible reasons of the temperature induced resonant conditions were discussed in the range of the lead-tunneling cell-lead model near Kondo temperature. We also found that redistribution of the voltage drop becomes crucial in this model. Furthermore, the direct tunneling plays the dominant role and cannot be omitted in the quantum systems with the total tunneling thickness up to 5-6 nm. Hence, Coulomb blockade model cannot explain Kondo-induced TMR anomalies in nanometer-sized tunnel junctions.

7 pages, 3 figures

References in corpus (6)

• Kondo effect in quantum dots
• NRG study of the Kondo effect in the presence of itinerant-electron ferromagnetism
• Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles
• Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles
• Giant magnetoresistance in nanoscale ferromagnetic heterocontacts
• Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La${}_{0.67}$Sr${}_{0.33}$MnO${}_3$ magnetic tunnel junctions

Cited by in corpus (1)

• Jump of tunneling magnetoresistance in magnetic nanocontacts with mismatched cross section