Electron states of mono- and bilayer graphene on SiC probed by STM
arXiv:cond-mat/0702406 · doi:10.1103/PhysRevB.76.041403
Abstract
We present a scanning tunneling microscopy (STM) study of a gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis of atomic scale images, we identify two different kinds of terraces, which we unambiguously attribute to mono- and bilayer graphene capping a C-rich interface. At low temperature, both terraces show quantum interferences generated by static impurities. Such interferences are a fingerprint of -like states close to the Fermi level. We conclude that the metallic states of the first graphene layer are almost unperturbed by the underlying interface, in agreement with recent photoemission experiments (A. Bostwick et al., Nature Physics 3, 36 (2007))
4 pages, 3 figures submitted
Cited by in corpus (7)
- Substrate-induced band gap opening in epitaxial graphene
- Origins of anomalous electronic structures of epitaxial graphene on silicon carbide
- Electronic properties of bilayer and multilayer graphene
- Few layers graphene on 6H-SiC(000-1): an STM study
- Modeling vacancies and hydrogen impurities in graphene: A molecular point of view
- Local impurity effects in superconducting graphene
- Raman spectroscopy and imaging of graphene