Tunable Frohlich Polarons in Organic Single-Crystal Transistors

Abstract

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device performance- has been related to the quality of the organic semiconductor. Recently, it has been appreciated that also the nearby dielectric has an unexpectedly strong influence. The mechanisms responsible for this influence are not understood. To investigate these mechanisms we have studied transport through organic single crystal FETs with different gate insulators. We find that the temperature dependence of the mobility evolves from metallic-like to insulating-like with increasing the dielectric constant of the insulator. The phenomenon is accounted for by a two-dimensional Frohlich polaron model that quantitatively describes our observations and shows that increasing the dielectric polarizability results in a crossover from the weak to the strong polaronic coupling regime.

References in corpus (4)

• Hall effect in the accumulation layers on the surface of organic semiconductors
• Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
• Hall effect of quasi-hole gas in organic single-crystal transistors
• Polarization effects in the channel of an organic field-effect transistor

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